Biography
Hiroshi Amano is a physicist, engineer and inventor specializing in the field of semiconductor technology. He was the co-inventor of the blue LED, for which he was awarded the 2014 Nobel Prize in Physics together with Isamu Akasaki and Shuji Nakamura. Amano was elected as a member of the National Academy of Engineering in 2016 for the development of p-type gallium nitride (GaN) doping, enabling blue semiconductor LEDs.
Hiroshi Amano’s research focuses on the growth, characterization and device applications of group III nitride semiconductors, which are well known as materials used in blue light-emitting diodes today. In 1985, he developed low-temperature deposited buffer layers for the growth of group III nitride semiconductor films on a sapphire substrate, which led to the realization of group-III-nitride semiconductor based light-emitting diodes and laser diodes. In 1989, he succeeded in growing p-type GaN and fabricating a p-n-junction-type GaN-based UV/blue light-emitting diode for the first time in the world.
From 1988 to 1992, Amano was a research associate at Nagoya University. In 1992, he moved to Meijo University, where he was an assistant professor. From 1998 to 2002, He was an associate professor. In 2002, he became a professor. In 2010, he moved to the Graduate School of Engineering, Nagoya University, where he is currently a professor.
Select Publications
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Comparative study of quantum efficiency for InGaN photocathodes using various alkali metals. M Idei, A Koizumi, D Sato, T Nishitani, Y Honda, H Amano. Journal of Vacuum Science & Technology B 44 (1)
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Wavelength-tailored and dislocation-free InGaN nanoplatelets as pseudo-substrates fabricated by selective etching and regrowth Q Han, W Cai, J Wang, Y ITOH, Y Furusawa, H WANG, H Cheong,. Japanese Journal of Applied Physics
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Red-emitting μLEDs based on graded-indium InGaN nanoplatelets. Q Han, W Cai, J Wang, Y Furusawa, H WANG, X Li, H Cheong, Y Honda,. Japanese Journal of Applied Physics
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A Schottky gate p-GaN fin-channel field effect transistor on very low-doped p-GaN films. M Fregolent, S Singh, S Lu, H Watanabe, J Wang, C De Santi,. Japanese Journal of Applied Physics 64 (12), 12SP15
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Highly Oriented Epitaxial Hexagonal Boron Nitride Multilayers on High‐Temperature‐Resistant Single‐Crystal Aluminum Nitride (0001) X Yang, M Pristovsek, S Nitta, Y Honda, A Ohtake, Y Sakuma, T Hiroto, …
Advanced Science 12 (46), e09354
Select Awards and Honors
- Foreign Member of the National Academy of Engineering[8] 2016
- Compound Semiconductor Electronics Achievement Award, Japan Society of Applied Physics, Japan 2016
- Asian Scientist 100, Asian Scientist 2016
- Special Achievement Award, Institute of Electronics, Information and Communication Engineers 2015
- Nobel Prize in Physics 2014
- Person of Cultural Merit, the Japanese Government 2014
- Order of Culture, the Japanese Emperor 2014
- IEEE/LEOS Engineering Achievement Award 1996
Education
- Bachelor of Engineering degree, Nagoya University 1983
- Master of Engineering degree, Nagoya University 1985
- Doctor of Engineering degree, Nagoya University 1989