- Other College Appointments
- Kavli Institute at Cornell
Biography
Hiroshi Amano is a physicist, engineer and inventor specializing in the field of semiconductor technology. He was the co-inventor of the blue LED, for which he was awarded the 2014 Nobel Prize in Physics together with Isamu Akasaki and Shuji Nakamura. Amano was elected as a member of the National Academy of Engineering in 2016 for the development of p-type gallium nitride (GaN) doping, enabling blue semiconductor LEDs.
Hiroshi Amano’s research focuses on the growth, characterization and device applications of group III nitride semiconductors, which are well known as materials used in blue light-emitting diodes today. In 1985, he developed low-temperature deposited buffer layers for the growth of group III nitride semiconductor films on a sapphire substrate, which led to the realization of group-III-nitride semiconductor based light-emitting diodes and laser diodes. In 1989, he succeeded in growing p-type GaN and fabricating a p-n-junction-type GaN-based UV/blue light-emitting diode for the first time in the world.
From 1988 to 1992, Amano was a research associate at Nagoya University. In 1992, he moved to Meijo University, where he was an assistant professor. From 1998 to 2002, He was an associate professor. In 2002, he became a professor. In 2010, he moved to the Graduate School of Engineering, Nagoya University, where he is currently a professor.
Select Publications
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Observation of 2D-magnesium-intercalated gallium nitride superlattices. Jia Wang, Wentao Cai, Weifang Lu, Shun Lu, Emi Kano, Verdad C Agulto, Biplab Sarkar, Hirotaka Watanabe, Nobuyuki Ikarashi, Toshiyuki Iwamoto, Makoto Nakajima, Yoshio Honda, Hiroshi Amano2024 Nature
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Continuous-wave lasing of AlGaN-based ultraviolet laser diode at 274.8 nm by current injection. Ziyi Zhang, Maki Kushimoto, Akira Yoshikawa, Koji Aoto, Leo J Schowalter, Chiaki Sasaoka, Hiroshi Amano. 2022 DUV laser
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The 2020 UV emitter roadmap. Hiroshi Amano, Ramón Collazo, Carlo De Santi, Sven Einfeldt, Mitsuru Funato, Johannes Glaab, Sylvia Hagedorn, Akira Hirano, Hideki Hirayama, Ryota Ishii, Yukio Kashima, Yoichi Kawakami, Ronny Kirste, Michael Kneissl, Robert Martin, Frank Mehnke, Matteo Meneghini, Abdallah Ougazzaden, Peter J Parbrook, Siddharth Rajan, Pramod Reddy, Friedhard Römer, Jan Ruschel, Biplab Sarkar, Ferdinand Scholz, Leo J Schowalter, Philip Shields, Zlatko Sitar, Luca Sulmoni, Tao Wang, Tim Wernicke, Markus Weyers, Bernd Witzigmann, Yuh-Renn Wu, Thomas Wunderer, Yuewei Zhang. 2020 UV emitter roadmap
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P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI).Hiroshi Amano, Masahiro Kito, Kazumasa Hiramatsu, Isamu Akasaki. 1989 Mg doped p-GaN
Select Awards and Honors
- Foreign Member of the National Academy of Engineering[8] 2016
- Compound Semiconductor Electronics Achievement Award, Japan Society of Applied Physics, Japan 2016
- Asian Scientist 100, Asian Scientist 2016
- Special Achievement Award, Institute of Electronics, Information and Communication Engineers 2015
- Nobel Prize in Physics 2014
- Person of Cultural Merit, the Japanese Government 2014
- Order of Culture, the Japanese Emperor 2014
- IEEE/LEOS Engineering Achievement Award 1996
Education
- Bachelor of Engineering degree, Nagoya University 1983
- Master of Engineering degree, Nagoya University 1985
- Doctor of Engineering degree, Nagoya University 1989